inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn darlington power transistor MJ11016 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min.) high dc current gain- : h fe = 1000(min.)@i c = 20a low collector saturation voltage- : v ce (sat) = 3.0v(max.)@ i c = 20a complement to type mj11015 applications designed for use as output dev ices in complementary general purpose amplifier applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continunous 30 a i b base current-continunous 1 a p c collector power dissipation @t c =25 200 w t j junction temperature 200 t stg storage temperature range -55~+200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 0.87 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn darlington power transistor MJ11016 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1a; i b = 0 120 v v ce (sat)-1 collector-emitter saturation voltage i c = 20a; i b = 0.2a 3.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 30a; i b = 0.3a 4.0 v v be (sat)-1 base-emitter saturation voltage i c = 20a; i b = 0.2a 3.5 v v be (sat)-2 base-emitter saturation voltage i c = 30a; i b = 0.3a 5.0 v i cer collector cutoff current v ce =120v; r be =1k v ce =120v; r be =1k ; t c =150 1.0 5.0 ma i ceo collector cutoff current v ce = 50v; i b = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 5.0 ma h fe-1 dc current gain i c = 20a, v ce = 5v 1000 h fe-2 dc current gain i c = 30a, v ce = 5v 200
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